8307050
RF ASIC DESIGN,
RF ASIC DESIGN, 5 ov
Lecturer info
Course responsible: Prof. NIKOLAY TCHAMOV (nikolay@cs.tut.fi), Course coordinator: MSc. SAMI SIPILÄ (sipila@cs.tut.fi)
Lectures and exercises:
Lectures total: 56 h. Exercise hours total: 56 h.
Lecture room and time
Monday 12 - 14, TB222
Wednesday 10 - 12, TB224
Weekly teaching / period |
|
|
|
|
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Lectures (h): |
4+ |
4 |
- |
- |
- |
Exercises (h): |
4+ |
4 |
- |
- |
- |
Course objectives
Intermediate to advanced level knowledge of RF-ASIC development. The course is of essential importance and is further continued by 8307060 Communication ICs Development Seminar II.
Content of the course
Submicron RF IC technologies and their essential components: Electrical and structural specifics of the integrated bipolar Si/SiGe and MOS transistors, varactors, planar inductors, contact pads etc. Electrical models, frequency, transient, temperature, noise and tolerance analysis and design. Physical (layout) design. Parasitic extraction. On-wafer RF-ASIC measurements under a Cascade Microtech probe station, GHz-range spectrum and network analyzers and oscilloscope. RF-ASIC design examples: LNA, LC-VCO, RR-VCO, etc. Technologies in use: Submicron SiGe/BiCMOS and CMOS. Software in use: Cadence, ADS, PSpice.
Requirements
Completion of the exercise design, measurement tasks and written examination.
Literature
Selected chapters from various books, such as Gray, Hurst, Lewis and Meyer: Analysis and Design of Analog Integrated Circuits, 4th edition, John Wiley & Sons, 2001, ISBN: 0-471-32168-0.
Information on prerequisites
The mentioned prerequisites or equivalent knowledge.
Prerequisites
Number |
Name |
|
|
8307030 |
5 |
Obl. |
Notes
Accepted as a post-graduate course.