8307050
RF ASIC DESIGN,
RF ASIC DESIGN, 5 ov
Lecturer info
Course responsible: Prof. NIKOLAY TCHAMOV Course coordinator: SAMI SIPILÄ
Lectures and exercises:
Lectures total: 56 h. Exercise hours total: 56 h.
Weekly teaching / period |
|
|
|
|
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Lectures (h): |
4+ |
4 |
- |
- |
- |
Exercises (h): |
4+ |
4 |
- |
- |
- |
Course objectives
Intermediate to advanced level knowledge for RF-ASIC development. The course is of essential importance and further continued by 8307060 Communication ICs Development Seminar-II.
Content of the course
Submicron RF IC Technologies and their essential components: Electrical and Structural specifics of the integrated Bipolar Si/SiGe and MOS Transistors, Varactors, Planar Inductors, Contact Pads etc. Electrical models, frequency, transient, temperature, noise and tolerance Analysis and Design. Physical (layout) Design. Parasitics Extractions. On-Wafer RF-ASIC Measurements under Cascade Microtech Probe station, GHz-range Spectrum and Network Analyzers and Oscilloscope. RF-ASIC design examples: LNA, LC-VCO, RR-VCO, etc. Technologies in use: Submicron SiGe/BiCMOS and CMOS. Software in use: CADENCE, ADS, PSpice.
Requirements
Completion of the Exercise Design and Measurement tasks and written Examination.
Literature
Selected chapters from various books; the materials will be delivered on CD-ROM.
Prerequisites
Number |
Name |
|
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8307030 |
5 |
Obl. |
Notes
Accepted as a Post-Graduate course.