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Course unit, curriculum year 2024–2025
EE.ELE.450
Semiconductor Device Physics, 5 cr
Tampere University
- Description
- Completion options
Teaching periods
Active in period 3 (1.1.2025–2.3.2025)
Active in period 4 (3.3.2025–31.5.2025)
Course code
EE.ELE.450Language of instruction
EnglishAcademic years
2024–2025, 2025–2026, 2026–2027Level of study
Advanced studiesGrading scale
General scale, 0-5Persons responsible
Responsible teacher:
Sayani MajumdarResponsible organisation
Faculty of Information Technology and Communication Sciences 100 %
Coordinating organisation
Electrical Engineering Studies 100 %
Core content
- Materials physics: energy bands, charge carriers, doping
- Junctions: metal-semiconductor, p-n, tunnel
- Devices: Schottky diode, p-n junction diode, tunnel diode, junction transistor, field effect transistor, photovoltaic devices
Specialist knowledge
- Metal oxide and 2D semiconductors
- Memristors, Spintronics and Ferroelectric Devices
Learning outcomes
Prerequisites
Further information
Learning material
Equivalences
Studies that include this course
Completion option 1
Attendance of at least 75% of the lectures and passing the final exam. Students may also receive some extra credit by completing the weekly exercises.
Completion of all options is required.
Participation in teaching
07.01.2025 – 27.04.2025
Active in period 3 (1.1.2025–2.3.2025)
Active in period 4 (3.3.2025–31.5.2025)
Exam
No scheduled teaching