Semiconductor Device Physics, 5 cr

Tampere University

Description
Completion options

Teaching periods

Course code

EE.ELE.450

Language of instruction

English

Academic years

2024–2025, 2025–2026, 2026–2027

Level of study

Advanced studies

Grading scale

General scale, 0-5

Persons responsible

Responsible teacher:

Sayani Majumdar

Responsible organisation

Faculty of Information Technology and Communication Sciences 100 %

Coordinating organisation

Electrical Engineering Studies 100 %

Core content

Materials physics: energy bands, charge carriers, doping
Junctions: metal-semiconductor, p-n, tunnel
Devices: Schottky diode, p-n junction diode, tunnel diode, junction transistor, field effect transistor, photovoltaic devices

Specialist knowledge

Metal oxide and 2D semiconductors
Memristors, Spintronics and Ferroelectric Devices

Learning outcomes

Prerequisites

Further information

Learning material

Equivalences

Studies that include this course

Completion option 1

Attendance of at least 75% of the lectures and passing the final exam. Students may also receive some extra credit by completing the weekly exercises.

Completion of all options is required.

Participation in teaching

Lectures (English)

07.01.2025 – 27.04.2025

Exam

07.05.2025 – 07.05.2025