Opinto-opas 2008-2009 Perus Perus Pori KV Jatko Avoin |Tutkinnot|     |Opintokokonaisuudet|     |Opintojaksot|

Opintojakson vastuuhenkilö

Nikolay Tchamov, Svetozar Broussev

Toteutuskerrat

	Luentoajat ja -paikat	Kohderyhmä, jolle suositellaan
Toteutus 1	Per 1, 2 : Tiistai 9 - 12, TC173

Suoritusvaatimukset

1. Exam. 2. Attending at least 80% of the Lectures. 3. Attending all Exercises. 4. Developing all Homeworks. 5. Completing all Laboratory Exercises.
Osasuoritusten pitää liittyä samaan toteutuskertaan

Opetukseen ja oppimiseen liittyvät periaatteet ja lähtökohdat

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Tavoitteet

Major practical course for MSc level targeting the methods and skills of the design of a modern monolithic RF Integrated Circuits. It serves as complete course for preparing the MSc engineer to design the implementation, the fabrication and the measurement on modern BiCMOS and CMOS Si-process using the integrated tools of CADENCE and modern GHz-range Spectrum Analyzer and VCO/PLL Measurement System. The course is developing further the Designer's Tool Box of Set-ups initiated in the course of TLT-8307 RF-ASIC Design Project-1, for Evaluation of the Silicon Active and Passive Components in the GHz range like Transistors, Inductors, Varactors, Capacitors, Contact/Bonding Pads etc. In this course the recently published in IEEE Transaction on CAS-II structure of Dual-Band GHz-range VCO is the current Target course design. A Generic 90-nm CMOS process provided by Cadence will be used. From the circuit idea, via electric design simulations, layout floor plan, components design and extracted parasitics simulations, and concluding with the GDSII database development and debugging. The course is also introducing the students into the development of their M.Sc. Thesis Works.

Sisältö

Sisältöalue	Ydinaines	Täydentävä tietämys	Erityistietämys
1.	Introduction of the RF-IC Design flow at MSc Level. IEEE CAS-2: Novel Fourth-Order Dual-Band VCO: overview and paper presentation, main ideas.
2.	AMS Silicon CMOS process overview, available components and their characterization. VCO Electrical Design: 4th Order Resonator, Negative-Gm stage, Capacitor Banks, Current Mirror. Other Dual-Band VCO topologies. Differential layout and specifics for RF. Bonding Pads and ESD. IC Packaging issues.
3.	RF-Measurements: RF Components, Wafer probing, Calibration and Measurement set-up preparation. RF-Measurements instruments: High-Speed Oscilloscopes, Spectrum Analyzers, Signal-Source Analyzers.
4.	The MSc Work Organisation, MSc Thesis Structure, Major Parts and Quality Standard; Examples and Templates.

Opintojakson arvostelu

Exam.

Arvosteluasteikko:

Opintojaksolla käytetään numeerista arviointiasteikkoa (1-5)

Osasuoritukset:

Osasuoritusten pitää liittyä samaan toteutuskertaan

Oppimateriaali

Tyyppi	Nimi	Tekijä	ISBN	URL	Painos,saatavuus...	Tenttimateriaali	Kieli
Lehti	Journal papers						Englanti
Luentokalvot	RF-ASIC M.Sc. Design Project lecture slides						Englanti
Muu kirjallisuus	Cadence and process manuals						Englanti

Esitietovaatimukset

Lisätietoja

Updated version of the former course RF-ASIC Design-2, TLT-8606, and Seminar-2, TLT-8806, which were lectured last time in year 2007/08.

Tarkempia tietoja toteutuskerroittain

	Kuvaus	Opetusmuodot	Toteutustapa
Toteutus 1	The course introduces the Design Flow of RF Integrated Circuits (RF-IC) at MSc Level. An advanced Voltage-Controlled Oscillator (VCO) will be used as an example circuit topology to demonstrate the Electrical Design, the Physical Design, and the Measurement Methods for typical RF-IC. RF design specifics, such as component selection for RF, Packaging issues, Wafer probing etc., will be explained throughout the course. At the end of the course each student will have an integrated circuit that is ready for fabrication on a modern CMOS process. The course is also introducing the students into the development of their M.Sc. Thesis Works.	Luennot Seminaarityöt Harjoitukset Laboratoriotyöt	Lähiopetus: 0 % Etäopetus: 0 % Itseopiskelu: 0 %

Viimeksi muokattu	23.01.2009
Muokkaaja	Svetozar Broussev